Residual Defects in Silicon Implanted with Boron and Phosphorous Ions
- 1 Department of Basic Sciences, Tafila Applied University College Al-Balqa, Applied University, P.O. Box 40, AL-Eys_66141, Tafila, Jordan
Abstract
Accumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.
DOI: https://doi.org/10.3844/ajassp.2005.877.880
Copyright: © 2005 M. Jadan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
- 3,157 Views
- 2,223 Downloads
- 0 Citations
Download
Keywords
- Accumulation of radiation defects
- residual
- dislocation loops